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dosika

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dosika
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  • Hi Mathias, the process is a subtractive on and based on a epitaxial layer stack. I attached a cleaner GDS with layer desc below. * layer 3/0 is an isolation implant so the area outside the device sees a He+ implant damaging all the conductive lay…
    in LVS for compound semiconductors Comment by dosika July 2020
  • Hi Matthias, attached is the GDS txt file of a single 3 terminal device. Let me know if you need further explanation of layers. A sample of a texted approach with "S", "D", "G" might be a good start for me to understa…
    in LVS for compound semiconductors Comment by dosika June 2020
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